? semiconductor components industries, llc, 2005 july, 2005 ? rev. 2 1 publication order number: mbr130t1/d mbr130t1, mbr130t3 surface mount schottky power rectifier plastic sod?123 package this device uses the schottky barrier principle with a large area metal?to?silicon power diode. ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. this package also provides an easy to work with alternative to leadless 34 package style. features ? guardring for stress protection ? low forward voltage ? 125 c operating junction temperature ? epoxy meets ul 94 v?0 @ 0.125 in ? package designed for optimal automated board assembly ? esd ratings: machine model, c; human body model, 3 ? pb?free packages are available mechanical characteristics ? reel options: mbr130t1 = 3,000 per 7 in reel/8 mm tape mbr130t3 = 10,000 per 13 in reel/8 mm tape ? device marking: s3 ? polarity designator: cathode band ? weight: 11.7 mg (approximately) ? case: epoxy, molded ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds device package shipping ? ordering information mbr130t1 sod?123 http://onsemi.com sod?123 case 425 style 1 3000/tape & reel schottky barrier rectifier 1.0 amperes 30 volts mbr130t3 sod?123 10,000/tape & ree l marking diagram s3 m 1 s3 = specific device code m = date code = pb?free package (note: microdot may be in either location ) mbr130t1g sod?123 (pb?free) 3000/tape & reel MBR130T3G sod?123 (pb?free) 10,000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specificatio n brochure, brd8011/d.
mbr130t1, mbr130t3 http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v average rectified forward current (rated v r ) t l = 65 c i f(av) 1.0 a non?repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 5.5 a storage temperature range t stg ?65 to +125 c operating junction temperature t j ?65 to +125 c voltage rate of change (rated v r ) dv/dt 1000 v/ s thermal characteristics characteristic symbol value unit thermal resistance, junction to ambient (note 1) r ja 230 c/w thermal resistance, junction to lead (note 1) r jl 108 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. fr?4 or fr?5 = 3.5 1.5 inches using a 1 inch cu pad. electrical characteristics characteristic symbol typ max unit maximum instantaneous forward voltage (note 2) (i f = 0.1 a, t j = 25 c) (i f = 0.7 a, t j = 25 c) (i f = 1.0 a, t j = 25 c) v f ? ? 0.47 0.35 0.45 ? v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 25 c) (v r = 5 v, t c = 25 c) i r 60 10 a 2. pulse test: pulse width = 300 s, duty cycle 2%.
mbr130t1, mbr130t3 http://onsemi.com 3 10 1 0.1 v f , instantaneous forward voltage (volts) figure 1. maximum forward voltage 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6 figure 2. typical forward voltage t j = 125 c 75 c 25 c 0.55 0.65 10 1 0.1 v f , instantaneous forward voltage (volts) 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6 t j = 125 c 75 c 25 c 0.55 0.6 5 i f , instantaneous forward current (amps) i f , instantaneous forward current (amps) figure 3. typical reverse current v r , reverse voltage (volts) 0.01 0.001 0.0001 0.00001 30 25 20 15 10 5 0 figure 4. typical capacitance v r , reverse voltage (volts) 3 5 30 25 20 15 10 5 0 180 160 140 120 100 80 60 40 20 0 200 figure 5. current derating, lead, r jl = 108 c/w t l , lead temperature ( c) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 120 100 80 60 40 20 0 figure 6. forward power dissipation i f(av) , average forward current (amps) 1. 8 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 0 0.8 0.9 i r , reverse current (amps) 0.000001 0.0000001 c, capacitance (pf) t j = 125 c 75 c 25 c i f(av) , average forward current (amps) square wave rated voltage applied dc p f(av) , average forward power dissipation (watts) 1.6 square wave dc
mbr130t1, mbr130t3 http://onsemi.com 4 package dimensions sod?123 case 425?04 issue e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. aaaa aaaa aaaa e b d a l c 1 2 a1 dim min nom max millimeters inches a 0.94 1.17 1.35 0.037 a1 0.00 0.05 0.10 0.000 b 0.51 0.61 0.71 0.020 c 1.60 0.15 0.055 d 1.40 1.80 e 2.54 2.69 2.84 0.100 ??? 3.68 0.140 l 0.25 3.86 0.010 h e 0.046 0.002 0.024 0.063 0.106 0.145 0.053 0.004 0.028 0.071 0.112 0.152 min nom max 3.56 h e ??? ??? ??? 0.006 ??? ??? ??? ??? *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.22 0.048 mm inches scale 10:1 style 1: pin 1. cathode 2. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mbr130t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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